feb.1999 mitsubishi thyristor modules tm400dz/cz/pz/uz-m,-h,-24,-2h high power general use insulated type outline drawing & circuit diagram dimensions in mm application dc motor control, nc equipment, ac motor control, contactless switches, electric furnace temperature control, light dimmers tm400dz/cz/pz/uz-m,-h,-24,-2h ? i t (av) average on-state current .......... 400a ? v rrm repetitive peak reverse voltage ........ 400/800/1200/1600v ? v drm repetitive peak off-state voltage ........ 400/800/1200/1600v ? double arms ? insulated type (dz type) (dz type) (bold line is connective bar.) 16 36 50 60 a 1 k 1 a 2 k 2 24 36 26 g 2 k 2 g 1 k 1 3 f 6.5 4?8 24 24 24 26 35 44 35 23 80 0.2 80 0.2 180 tab#110, t=0.5 9 36 50 9 (dz) a 1 cr 1 k 1 k 2 a 2 cr 2 k 2 g 2 k 1 g 1 k 2 g 2 a 1 cr 1 k 1 k 2 a 2 cr 2 g 1 k 1 k 2 g 2 a 1 cr 1 k 1 k 2 a 2 cr 2 g 1 k 1 (cz) (pz) (uz) k 2 g 2 a 1 cr 1 k 1 k 2 a 2 cr 2 g 1 k 1 label
feb.1999 24 1200 1350 960 1200 1350 960 absolute maximum ratings unit v v v v v v mitsubishi thyristor modules tm400dz/cz/pz/uz-m,-h,-24,-2h high power general use insulated type m 400 480 320 400 480 320 symbol v rrm v rsm v r (dc) v drm v dsm v d (dc) parameter repetitive peak reverse voltage non-repetitive peak reverse voltage dc reverse voltage repetitive peak off-state voltage non-repetitive peak off-state voltage dc off-state voltage unit a a a a 2 s a/ m s w w v v a c c v nm kgcm nm kgcm g conditions single-phase, half-wave 180 conduction, t c =66 c one half cycle at 60hz, peak value value for one cycle of surge current v d =1/2v drm , i g =1.0a, t j =125 c charged part to case main terminal screw m8 mounting screw m6 typical value ratings 620 400 8000 2.7 10 5 200 10 3.0 10 5.0 4.0 C40~+125 C40~+125 2500 8.83~10.8 90~110 1.96~3.92 20~40 1100 symbol i t (rms) i t (av) i tsm i 2 t di/dt p gm p g (av) v fgm v rgm i fgm t j t stg v iso parameter rms on-state current average on-state current surge (non-repetitive) on-state current i 2 t for fusing critical rate of rise of on-state current peak gate power dissipation average gate power dissipation peak gate forward voltage peak gate reverse voltage peak gate forward current junction temperature storage temperature isolation voltage mounting torque weight voltage class electrical characteristics unit ma ma v v/ m s v v ma c/w c/w m w limits symbol i rrm i drm v tm dv/dt v gt v gd i gt r th (j-c) r th (c-f) parameter repetitive peak reverse current repetitive peak off-state current on-state voltage critical rate of rise of off-state voltage gate trigger voltage gate non-trigger voltage gate trigger current thermal resistance contact thermal resistance insulation resistance test conditions t j =125 c, v rrm applied t j =125 c, v drm applied t j =125 c, i tm =1200a, instantaneous meas. t j =125 c, v d =2/3v drm t j =25 c, v d =6v, r l =2 w t j =125 c, v d =1/2v drm t j =25 c, v d =6v, r l =2 w junction to case, per 1/2 module case to fin, conductive grease applied, per 1/2 module measured with a 500v megohmmeter between main terminal and case min. 500 0.25 15 10 typ. max. 60 60 1.4 3.0 100 0.1 0.05 h 800 960 640 800 960 640 2h 1600 1700 1280 1600 1700 1280
feb.1999 0 10 0 10 1 10 ? 10 ? 10 ? 10 1 10 0 10 4 10 3 10 2 10 1 10 ? 10 4 10 3 10 2 10 1 10 7 5 3 2 7 5 3 2 7 5 3 2 3 2 7 5 3 2 7 5 3 2 4 7 5 4 v gt =3.0v i gt = 100ma i fgm =4.0a p gm =10w v fgm =10v v gd =0.25v p g(av) = 3.0w t j =25? 0.6 7 5 3 2 7 5 3 2 7 5 3 2 2.6 1.0 1.4 1.8 2.2 t j =125? 70 50 30 20 7 5 3 2 0 10000 10 1 100 8000 6000 4000 2000 7 5 3 2 7 5 3 2 7 5 3 2 0.10 0 7 5 3 2 0.02 0.04 0.06 0.08 0 0 400 500 400 50 150 200 300 300 200 100 100 250 350 180 120 90 q 360 60 130 50 0 200 400 100 60 300 70 80 90 100 110 120 q =30 60 90 q 360 180 120 resistive, inductive load per single element q =30 resistive, inductive load per single element performance curves maximum on-state characteristic gate characteristics maximum transient thermal impedance (junction to case) maximum average on-state power dissipation (single phase halfwave) limiting value of the average on-state current (single phase halfwave) rated surge (non-repetitive) on-state current on-state current (a) surge (non-repetitive) on-state current (a) on-state voltage (v) conduction time (cycles at 60hz) gate voltage (v) average on-state power dissipation (w) transient thermal impedance ( c/w) case temperature ( c) time (s) gate current (ma) average on-state current (a) average on-state current (a) mitsubishi thyristor modules tm400dz/cz/pz/uz-m,-h,-24,-2h high power general use insulated type
feb.1999 130 50 0 400 600 200 60 70 80 90 100 110 120 q =30 60 90 120 180 270 dc q 360 800 0 0 400 600 200 200 400 600 q =30 60 180 270 360 q 120 90 dc resistive, inductive load per single element resistive, inductive load per single element maximum average on-state power dissipation (rectangular wave) limiting value of the average on-state current (rectangular wave) average on-state power dissipation (w) average on-state current (a) average on-state current (a) case temperature ( c) mitsubishi thyristor modules tm400dz/cz/pz/uz-m,-h,-24,-2h high power general use insulated type
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